Resistivity, carrier concentration, and carrier mobility of electrochemically deposited CdTe films

Resistivity, carrier concentration, and carrier mobility of electrochemically deposited CdTe films
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电化学沉积 CdTe 薄膜的电阻率、载流子浓度和载流子迁移率

DOI:
10.1063/1.337207
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发表时间:
1986
影响因子:
3.2
通讯作者:
S. Yamaguchi
S. Yamaguchi
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
M. Takahashi;K. Uosaki;H. Kita;S. Yamaguchi

文献摘要

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测量了在不同电位下电化学沉积的 CdTe 薄膜的电学类型、电阻率和施主或受主浓度。由这些结果确定膜的载流子迁移率。迁移率的沉积电位依赖性很小,电阻率的沉积电位依赖性主要由施主或受主浓度的沉积电位依赖性控制。由于载流子在晶界处的散射,与单晶中的载流子迁移率相比非常小。
The electrical type, resistivity, and donor or acceptor concentration of CdTe films deposited electrochemically at various potentials were measured. The carrier mobilities of the films were determined from these results. The deposition potential dependence of the mobility was small and the deposition potential dependence of the resistivity was mainly controlled by the deposition potential dependence of the donor or acceptor concentration. The carrier mobilities were very small compared with those in single crystals due to the scattering of the carriers at grain boundaries.