Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy
Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy
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DOI：
10.1088/0957-4484/19/27/275711
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发表时间：
2008-07-09
期刊：
影响因子：
3.5
通讯作者：
Martelli, Faustino
中科院分区：
文献类型：
--
作者：
Jabeen, Fauzia;Grillo, Vincenzo;Martelli, Faustino
用分子束外延技术在硅衬底上生长了自组装的砷化镓纳米线，不需要任何外加金属催化剂。生长发生在通过解理Si(100)衬底获得的Si面上。在有或没有Ga预沉积的情况下，都获得了生长。在这两种情况下，都得到了两种纳米线。第一种类型的导线在其自由端明显地呈现出Ga液滴，并且在Ga液滴下面的大范围内具有纤锌矿的晶格结构。相比之下，第二种类型的砷以金字塔形结束，晶格主要是闪锌矿，只有少数纤锌矿区域，如果有的话。Ga端的纳米线比其他纳米线更长，平均更细。实验结果表明，这两种类型的纳米线在不同的生长过程中生长。
Self-assembled GaAs nanowires have been grown on Si by molecular beam epitaxy without the use of any outside metal catalyst. The growth occurs on Si facets obtained by the cleavage of Si(100) substrates. The growth has been obtained with or without Ga pre-deposition. In both cases two kinds of nanowires have been obtained. The wires of the first type clearly present a Ga droplet at their free end and have a lattice structure that is wurtzite for wide regions beneath the Ga droplet. The second type, in contrast, ends with pyramidally shaped GaAs and has a crystal lattice that is mainly zincblende with only a few and small wurtzite regions, if any. The Ga-ended nanowires are longer than the others and thinner on average. The experimental findings suggest that the two types of nanowires grow after different growth processes.