Observation of biexciton emission from single semiconductor nanoplatelets
Observation of biexciton emission from single semiconductor nanoplatelets
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DOI：
10.1103/physrevmaterials.5.l051601
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发表时间：
2021-05
影响因子：
3.4
通讯作者：
Lintao Peng;Wooje Cho;Xufeng Zhang;D. Talapin;Xuedan Ma
中科院分区：
文献类型：
--
作者：
Lintao Peng;Wooje Cho;Xufeng Zhang;D. Talapin;Xuedan Ma
准二维半导体纳米片（NPLs）是研究俄歇复合过程对弱面内约束下多激子发射效率影响的有趣系统。我们利用低温单粒子光谱技术研究了CdSe/CdS核/壳不良粒子，并观察到了高激发功率下明亮的双激子发射。双激子的平均结合能为16.5 meV。观察到的双激子态和三激子态之间的切换表明了由俄歇电离过程介导的NPLs充放电动力学。这些发现对于能量、照明和量子应用的高效双激子发射具有重要意义。
Quasi-two-dimensional semiconductor nanoplatelets (NPLs) are intriguing systems for studying the influence of Auger recombination processes on the multiexciton emission efficiencies in the weak in-plane confinement regime. We investigate CdSe/CdS core/shell NPLs using cryogenic temperature single particle spectroscopy and observe bright biexciton emission at high excitation powers. The average binding energy of the biexcitons is determined to be 16.5 meV. The observed switching between the biexciton and trion states indicates charging-decharging dynamics of the NPLs mediated by the Auger ionization process. These findings are highly relevant for harvesting efficient biexciton emission for energy, lighting, and quantum applications.