Fast Magneto-Ionic Switching of Interface Anisotropy Using Yttria-Stabilized Zirconia Gate Oxide
Fast Magneto-Ionic Switching of Interface Anisotropy Using Yttria-Stabilized Zirconia Gate Oxide
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DOI：
10.1021/acs.nanolett.0c00340
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发表时间：
2020-05-13
期刊：
影响因子：
10.8
通讯作者：
Woo, Seonghoon
中科院分区：
文献类型：
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作者：
Lee, Ki-Young;Jo, Sujin;Woo, Seonghoon
多年来，界面磁性的电压控制一直是自旋电子学研究的重点，因为它可能使超低功率技术成为可能。在几种建议的方法中，磁离子对磁性的控制表现出对磁各向异性的很大调制。此外，最近展示的使用氢离子的磁离子器件在室温下表现出相对较快的磁化翻转开关，t(Sw)类似于100ms。然而，要用于现代电子设备，可能需要显著提高运算速度。在这里，我们证明了质子诱导磁化翻转的速度在很大程度上取决于质子导电氧化物。我们使用氧化钇稳定的氧化锆(YSZ)实现了类似于1ms可靠(>；10(3)个周期)的开关，这类似于在室温下报道的最先进的磁离子器件的100倍快。我们的结果表明，质子导电材料的进一步工程化可能带来实质性的改进，这可能使基于磁离子的新的低功率计算方案成为可能。
Voltage control of interfacial magnetism has been greatly highlighted in spintronics research for many years, as it might enable ultralow power technologies. Among a few suggested approaches, magnetoionic control of magnetism has demonstrated large modulation of magnetic anisotropy. Moreover, the recent demonstration of magneto-ionic devices using hydrogen ions presented relatively fast magnetization toggle switching, t(SW) similar to 100 ms, at room temperature. However, the operation speed may need to be significantly improved to be used for modern electronic devices. Here, we demonstrate that the speed of proton-induced magnetization toggle switching largely depends on proton-conducting oxides. We achieve similar to 1 ms reliable (>10(3) cycles) switching using yttria-stabilized zirconia (YSZ), which is similar to 100 times faster than the state-of-the-art magneto-ionic devices reported to date at room temperature. Our results suggest that further engineering of the proton-conducting materials could bring substantial improvement that may enable new low-power computing scheme based on magneto-ionics.