Anisotropic atomic-structure related anomalous Hall resistance in few-layer black phosphorus
Anisotropic atomic-structure related anomalous Hall resistance in few-layer black phosphorus
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DOI：
10.1039/c7ra03600k
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发表时间：
2017-04
期刊：
影响因子：
3.9
通讯作者：
T. Makino;Y. Katagiri;C. Ohata;K. Nomura;J. Haruyama
中科院分区：
文献类型：
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作者：
T. Makino;Y. Katagiri;C. Ohata;K. Nomura;J. Haruyama
单层（或几层）黑磷（BP）有望成为下一代二维（2D）原子薄半导体。与其他二维原子薄层相比，BP具有显着的各向异性原子结构，可以提供独特的电子、光学和磁性能。在此，我们报告了在少层 BP 的低 B 区域中以极小的量子化水平观察到霍尔电阻的 B2/3 磁场 (B) 依赖性，这与很大程度上由各向异性空穴迁移率证实的各向异性电子结构相关。 B2/3 依赖性的定性解释之一是可能存在单轴狄拉克光谱（由沿屈曲扶手椅方向的单轴拉伸引起的闭合带隙产生，偶尔由切割和引线键合样品的过程引入，经拉曼光谱证实）及其与沿锯齿形方向存在的薛定谔光谱的杂化。观察到的现象意味着由于原子薄（几层）BP的强各向异性而具有巨大的潜力，人们高度期望这将为新颖的物理及其在创新的二维原子薄器件中的应用打开大门。
Mono- (or few) layer black phosphorus (BP) is highly expected to be a next-generation two-dimensional (2D) atom-thin semiconductor. Compared with other 2D atom-thin layers, BP has a significantly anisotropic atomic structure, which can provide unique electronic, optical, and magnetic properties. Herein, we report the observation of B2/3 magnetic-field (B) dependence of the Hall resistance with extremely small quantized levels in the low-B regime of the few-layer BP, which are associated with the anisotropic electronic structure confirmed by largely anisotropic hole mobilities. One of the qualitative interpretations for the B2/3 dependence is the possible presence of a uniaxial Dirac spectrum (arising from a closed band gap caused by uniaxial stretch along the buckling armchair direction, which is occasionally introduced by a process for cutting and wire-bonding samples, confirmed by Raman spectroscopy) and its hybridization with a Schrodinger spectrum existing along a zigzag direction. The observed phenomena imply significant potential due to strong anisotropy of atom-thin (few-layer) BP, which is highly expected to open doors to novel physics and its application for innovative 2D atom-thin devices.