Resonant-cavity blue light-emitting diodes fabricated by two-step substrate transfer technique
Resonant-cavity blue light-emitting diodes fabricated by two-step substrate transfer technique
复制标题
两步衬底转移技术制备谐振腔蓝色发光二极管
DOI：
10.1049/el.2011.1923
复制
发表时间：
2011-08-18
影响因子：
1.1
通讯作者：
Wang, Q. -M.
中科院分区：
文献类型：
--
作者：
Hu, X. -L.;Zhang, J. -Y.;Wang, Q. -M.
GaN-based blue resonant-cavity light-emitting diodes (RCLEDs) have been fabricated by the two-step substrate transfer technique. The prefabricated structure was separated from its sapphire substrate by laser lift-off (LLO) process and was then transferred to a Si permanent substrate. By optimising the LLO process and adopting an indium tin oxide thin film and two high-reflectivity dielectric distributed Bragg reflectors, a narrow linewidth of 0.3 nm at 461.2 nm, corresponding to a quality factor of approximately 1530, has been observed from a blue RCLED under a current density of 2 kA/cm2. It indicates that a high quality optical resonator has been realised by this approach.
