Anomalous Angle-Dependent Magnetotransport Properties of Single InAs Nanowires.
Anomalous Angle-Dependent Magnetotransport Properties of Single InAs Nanowires.
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DOI：
10.1021/acs.nanolett.9b04383
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发表时间：
2019-12
期刊：
影响因子：
10.8
通讯作者：
P. Uredat;Ryutaro Kodaira;R. Horiguchi;S. Hara;A. Beyer;K. Volz;P. Klar;M. T. Elm
中科院分区：
文献类型：
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作者：
P. Uredat;Ryutaro Kodaira;R. Horiguchi;S. Hara;A. Beyer;K. Volz;P. Klar;M. T. Elm
我们研究了选区金属有机气相外延生长的单根InAs纳米线的磁输运特性。半导体InAs纳米线具有较大的正向普通磁阻效应。然而，对于垂直于纳米线轴线的施加磁场的取向，观察到偏离相应的二次行为。这种对磁阻的额外贡献可以用InAs纳米线中自由载流子的弥散边界散射来解释，并导致载流子迁移率的降低。因此，角度相关的磁输运测量揭示了一种高度反常的行为。通过数值模拟进一步研究了经典边界散射对纳米线的影响。在数值模拟的基础上，得到了一个与实验数据非常吻合的经验描述，并使人们能够量化边界散射对磁阻效应的贡献。
We study the magnetotransport properties of single InAs nanowires grown by selective-area metal-organic vapor-phase epitaxy. The semiconducting InAs nanowires exhibit a large positive ordinary magnetoresistance effect. However, a deviation from the corresponding quadratic behavior is observed for an orientation of the applied magnetic field perpendicular to the nanowire axis. This additional contribution to the magnetoresistance can be explained by diffuse boundary scattering of free carriers in the InAs nanowire and results in a reduction of the charge carrier mobility. As a consequence, angle-dependent magnetotransport measurements reveal a highly anomalous behavior. Numerical simulations have been conducted to further investigate the effect of classical boundary scattering in the nanowires. Based on the numerical simulations an empirical description is derived which yields excellent agreement with the experimental data and allows one to quantify the contribution of boundary scattering to the magnetoresistance effect.