Graphene-oxide-semiconductor planar-type electron emission device
Graphene-oxide-semiconductor planar-type electron emission device
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DOI：
10.1063/1.4942885
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发表时间：
2016-02-22
影响因子：
4
通讯作者：
Fujita, Jun-ichi
中科院分区：
文献类型：
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作者：
Murakami, Katsuhisa;Tanaka, Shunsuke;Fujita, Jun-ichi
石墨烯被用作金属氧化物半导体平面型电子发射器件的最顶层电极。通过镓蒸气辅助化学气相沉积，在薄氧化层上直接沉积石墨烯作为栅电极，具有多个不同的层。电子发射的最大效率（定义为阳极电流与阴极电流之比）在1.8 nm至7.0 nm范围内不依赖于电极厚度，这表明石墨烯电极内部的电子散射实际上受到抑制。此外，在保持0.1%-1.0%的较高电子发射效率的同时，获得了1-100 mA/cm(2)的高发射电流密度。氧化石墨烯半导体平面型电子发射器件在实际应用中具有同时实现高电子发射效率和高电子发射电流密度的巨大潜力。 (C) 2016 AIP 出版有限责任公司。
Graphene was used as the topmost electrode for a metal-oxide-semiconductor planar-type electron emission device. With several various layers, graphene as a gate electrode on the thin oxide layer was directly deposited by gallium vapor-assisted chemical vapor deposition. The maximum efficiency of the electron emission, defined as the ratio of anode current to cathode current, showed no dependency on electrode thickness in the range from 1.8 nm to 7.0 nm, indicating that electron scattering on the inside of the graphene electrode is practically suppressed. In addition, a high emission current density of 1-100 mA/cm(2) was obtained while maintaining a relatively high electron emission efficiency of 0.1%-1.0%. The graphene-oxide-semiconductor planar-type electron emission device has great potential to achieve both high electron emission efficiency and high electron emission current density in practical applications. (C) 2016 AIP Publishing LLC.