ALGAAS/GAINP HETEROJUNCTION TUNNEL-DIODE FOR CASCADE SOLAR-CELL APPLICATION
ALGAAS/GAINP HETEROJUNCTION TUNNEL-DIODE FOR CASCADE SOLAR-CELL APPLICATION
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DOI：
10.1063/1.354753
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发表时间：
1993-08-01
影响因子：
3.2
通讯作者：
BEDAIR, SM
中科院分区：
文献类型：
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作者：
JUNG, D;PARKER, CA;BEDAIR, SM
采用原子层外延生长方法制备了禁带宽度E(G)接近1.9 eV的p+-AlGaAs/n+-GaInP异质结隧道二极管。在使用碳和硒的二极管p侧和n侧分别获得了1×10(20)cm-3和5×10(19)cm-3的掺杂水平。该二极管可用于AlGaAs/GaAs级联太阳电池结构中高禁带和低禁带的互连。对于20A/cm2的正向电流，这是1000太阳运行时的预期电流密度，隧道结上只有大约20 mV的电压降。当在650℃和750℃下进行退火以模拟顶层单元的生长时，该二极管仍然适合1000太阳的工作。这是第一个报道的用高禁带材料系统制造的隧道二极管，可以用作1000太阳运行的级联太阳能电池结构的连接结。
A p+-AlGaAs/n+-GaInP heterojunction tunnel diode with band gap E(g) almost-equal-to 1.9 eV was fabricated by the atomic layer epitaxy growth. Doping levels of 1 x 10(20) cm-3 and 5 x 10(19) cm-3 were achieved in the p and n side of the diode using carbon and selenium, respectively. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. For forward current of 20 A/cm2, which is the expected current density at 1000 suns operation, there is only approximately 20 mV voltage drop across the tunnel junction. When annealed at 650 and 750-degrees-C to simulate the growth of the top cell, the diode was still suitable for 1000 suns operation. This is the first reported tunnel diode fabricated in high band-gap material systems that can be used as the connecting junction in the cascade solar cell structure operating at 1000 suns.