Hydrophilic direct bonding of diamond (111) substrate using treatment with H2SO4/H2O2
Hydrophilic direct bonding of diamond (111) substrate using treatment with H2SO4/H2O2
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DOI：
10.7567/1347-4065/ab4c87
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发表时间：
2020-02-01
影响因子：
1.5
通讯作者：
Takagi, Hideki
中科院分区：
文献类型：
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作者：
Matsumae, Takashi;Kurashima, Yuichi;Takagi, Hideki
本研究提出了一种机制，通过该机制，用H2SO 4/H2 O2混合物清洁的金刚石表面与氧等离子体活化的SiO2表面形成直接结合。表面表征显示，在75 ℃下用H2SO 4/H2 O2混合物清洗有效地使金刚石（111）表面OH封端，而表面粗糙度没有显著增加。OH封端的金刚石和SiO2/Si衬底通过在200 ℃下的热脱水反应形成C-O-Si键，而金刚石结晶度没有显著损失。预计使用H2SO 4/H2 O2的键合技术可以有助于金刚石和半导体衬底之间的集成，因为高结晶度金刚石衬底可以通过常用的清洗工艺直接键合。(C)2019日本应用物理学会
This study addresses a mechanism by which a diamond surface cleaned with a H2SO4/H2O2 mixture forms a direct bonding with an oxygen-plasma-activated SiO2 surface. Surface characterizations revealed that the cleaning with the H2SO4/H2O2 mixture at 75 degrees C effectively OH-terminated the diamond (111) surface without a significant increase in the surface roughness. The OH-terminated diamond and SiO2/Si substrates formed a C-O-Si bond by thermal dehydration reaction at 200 degrees C without significant loss in diamond crystallinity. It is expected that the bonding technique using H2SO4/H2O2 can contribute to the integration between diamond and semiconductor substrates because the high-crystallinity diamond substrate can be directly bonded through the commonly used cleaning processes. (C) 2019 The Japan Society of Applied Physics