Backreflection X-Ray Standing Waves and Crystal Truncation Rods as Structure Probe for Epilayer-Substrate Systems

Backreflection X-Ray Standing Waves and Crystal Truncation Rods as Structure Probe for Epilayer-Substrate Systems
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背反射 X 射线驻波和晶体截断棒作为外延层-衬底系统的结构探针

DOI:
10.1063/1.1143115
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发表时间:
1992
影响因子:
1.6
通讯作者:
P. Cowan
P. Cowan
中科院分区:
工程技术4区
文献类型:
--
作者:
H. Hashizume;M. Sugiyama;T. Niwa;O. Sakata;P. Cowan

文献摘要

被引文献

相似文献

利用背反射X射线驻波(BRXSW)和晶体截断棒(CTR)散射技术研究了GaAs(111)B衬底上异质外延CaSrF2晶体的结构。结合从X射线菲涅耳反射率数据获得的膜厚信息,组合的X射线驻波和BRXSW数据表明异质外延界面中缺少F和As层中的一个或两个。CTR数据支持GaAs(111)表面上缺少F层和占据T位的界面(Ca,Sr)原子。
Backreflection x‐ray standing waves (BRXSW) and crystal truncation rod (CTR) scatterings have been used to probe the structure of heteroepitaxial CaSrF2 crystals on GaAs(111)B substrate. Coupled with the film‐thickness information obtained from x‐ray Fresnel reflectivity data, the combined x‐ray standing wave and BRXSW data suggest one or both of the F and As layers missing from the heteroepitaxial interface. The CTR data support a missing F layer and interface (Ca, Sr) atoms occupying the T sites on GaAs(111) surface.