Effect of Molecular Weight and Protection Ratio on Latent Image Fluctuation of Chemically Amplified ExtremeUltraviolet Resists
Effect of Molecular Weight and Protection Ratio on Latent Image Fluctuation of Chemically Amplified ExtremeUltraviolet Resists
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分子量和防护率对化学放大极紫外光刻胶潜像波动的影响
DOI：
10.1143/jjap.51.126501
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
T. Kozawa
中科院分区：
文献类型：
--
作者：
J-A. Kim;G. Dodbiba;Y. Tanimura;K. Mitsuhashi;N. Fukuda;K. Okaya;S. Matsuo;T. Fujita;T. Kozawa
线边缘粗糙度（LER）一直是发展用于制造半导体器件的高分辨率光刻技术中最严重的问题。LER由抗蚀剂图案形成中的随机效应引起。在这项研究中，抗蚀剂主链聚合物的分子量和保护比对潜像波动的影响进行了研究，通过蒙特卡罗方法。从潜像波动的观点来看，发现高分子量和高保护率有利于LER的降低。
Line edge roughness (LER) has been the most serious problem in the development of high-resolution lithography for manufacturing semiconductor devices. LER is caused by the stochastic effects in resist pattern formation. In this study, the effects of the molecular weight and protection ratio of a resist backbone polymer on latent image fluctuation were investigated by a Monte Carlo method. From the viewpoint of latent image fluctuation, a high molecular weight and a high protection ratio were found to be favorable for the reduction in LER.