Robust picosecond writing of a layered antiferromagnet by staggered spin-orbit fields
Robust picosecond writing of a layered antiferromagnet by staggered spin-orbit fields
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DOI：
10.1103/physrevb.94.014439
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发表时间：
2016-07-28
影响因子：
3.7
通讯作者：
Wunderlich, J.
中科院分区：
文献类型：
--
作者：
Roy, P. E.;Otxoa, R. M.;Wunderlich, J.
在具有基面各向异性的层状易平面反铁磁体中，显示了电流诱导的交错自旋轨道场的超快电开关，具有最小的超调风险。可靠的开关是由于磁场般的扭矩，在激励脉冲持续时间内放松了对精度的严格要求。重点研究了具有弱平面双轴各向异性的系统。我们利用原子自旋动力学模拟和反铁磁序参量的有效方程研究了开关作为自旋轨道场强度、脉冲持续时间、上升和下降时间以及阻尼的函数。确定了切换双轴系统所需的临界自旋轨道场强度，并表明在可行的电流量级下写入是可能的。最后，我们讨论了显示占优势的单轴基面各向异性的系统的开关。
Ultrafast electrical switching by current-induced staggered spin-orbit fields, with minimal risk of overshoot is shown in layered easy-plane antiferromagnets with basal-plane anisotropies. Reliable switching is due to the fieldlike torque, relaxing stringent requirements with respect to precision in the duration of the excitation pulse. Focus is put on a system with weak planar biaxial anisotropy. We investigate the switching as a function of the spin-orbit field strength, pulse duration, rise and fall times, and damping using atomistic spin dynamics simulations and an effective equation for the antiferromagnetic order parameter. The critical spin-orbit field strength required for switching a biaxial system is determined, and we show that writing is possible at feasible current magnitudes. Finally, we discuss switching of systems exhibiting a dominant uniaxial basal-plane anisotropy.