Preparation of Ordered Vacancy Chalcopyrite-Type CuIn3Se5 Thin Films
Preparation of Ordered Vacancy Chalcopyrite-Type CuIn3Se5 Thin Films
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有序空位黄铜矿型 CuIn3Se5 薄膜的制备
DOI：
10.1143/jjap.33.l1251
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发表时间：
1994
影响因子：
1.5
通讯作者：
Takahiro Wada Takahiro Wada
中科院分区：
文献类型：
--
作者：
T. Negami;N. Kohara;Mikihiko Nishitani Mikihiko Nishitani;Takahiro Wada Takahiro Wada
采用三源共蒸发的方法，通过控制和屏蔽分子束，成功地制备了CuIn3Se5多晶薄膜。CuIn3Se_5薄膜具有良好的化学均一性和有序的空位黄铜矿结构，晶格常数分别为a=5.742和c=11.486。高分辨电子显微镜分析表明，CuIn3Se5薄膜具有柱状结构，每一晶粒在{112}面上都含有高密度的孪晶。通过光学透过率测量，确定了薄膜的带隙能为1.23 eV。薄膜为n型导电，电导率为3.7×10-7/Ω·cm。将CuIn3Se5薄膜的这些特性与黄铜矿型CuInSe2薄膜的这些特性进行了比较。
Polycrystalline CuIn3Se5 films were successfully prepared by three-source coevaporation with controlling and shielding of the molecular beams from elemental sources. The CuIn3Se5 film exhibited good chemical homogeneity and an ordered vacancy chalcopyrite-type structure with lattice constants of a=5.742 Å and c=11.486 Å. High-resolution transmission electron microscopy showed that the CuIn3Se5 film had a columnar microstructure and each grain contained a high density of twins in {112} planes. The band-gap energy of the film was determined to be 1.23 eV from optical transmission measurements. The film showed n-type conduction and low conductivity of 3.7×10-7/ Ω·cm. These characteristics of the CuIn3Se5 film are compared with those of the chalcopyrite-type CuInSe2 film.