Formation of a Two-Dimensional Electronic System in Laterally Assembled WTe Nanowires

Formation of a Two-Dimensional Electronic System in Laterally Assembled WTe Nanowires
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DOI:
10.1021/acsanm.2c00377
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发表时间:
2022-03
影响因子:
5.9
通讯作者:
Hiroshi Shimizu;J. Pu;Zheng Liu;HongEn Lim;M. Maruyama;Y. Nakanishi;Shunichiro Ito;Iori Kikuchi;T. Endo;K. Yanagi;Yugo Oshima;Susumu Okada;T. Takenobu;Y. Miyata
Hiroshi Shimizu;J. Pu;Zheng Liu;HongEn Lim;M. Maruyama;Y. Nakanishi;Shunichiro Ito;Iori Kikuchi;T. Endo;K. Yanagi;Yugo Oshima;Susumu Okada;T. Takenobu;Y. Miyata
中科院分区:
材料科学2区
文献类型:
--
作者:
Hiroshi Shimizu;J. Pu;Zheng Liu;HongEn Lim;M. Maruyama;Y. Nakanishi;Shunichiro Ito;Iori Kikuchi;T. Endo;K. Yanagi;Yugo Oshima;Susumu Okada;T. Takenobu;Y. Miyata

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一维过渡金属硫族化合物(transitional metal chalcogenides,TMCs)由于其原子级薄的线状结构和上级的导电性能,近年来引起了人们的广泛关注。这些线通过货车范德华力相互作用,聚集成具有所需性质的不同形状的1D晶体。然而,由于缺乏高质量的样品,对其输运特性的相关研究仍然有限。在这里,我们报告的形成的二维(2D)载气薄,带状束横向组装WTe纳米线生长的化学气相沉积。磁电阻测量表明,一个单一的WTe束表现出弱的反局域化和Shubnikov-de哈斯(SdH)振荡在低温下。角相关的SdH振荡作为证据的WTe束中的二维载气的实现。目前的研究结果表明,TMC纳米线的多功能性作为积木,以产生所需的维度为未来的功能电子和能量收集设备的电子系统。
One-dimensional (1D) transition metal chalcogenides (TMCs) have recently attracted much attention because of their atomically thin, wire structures and superior conducting properties. These wires interact via van der Waals forces, aggregating into 1D crystals of different shapes with desired properties. However, relevant studies on their transport properties remain limited because of the lack of high-quality samples. Herein, we report the formation of a two-dimensional (2D) carrier gas in thin, ribbon-shaped bundles of laterally assembled WTe nanowires grown by chemical vapor deposition. Magnetoresistance measurements reveal that a single WTe bundle exhibits weak antilocalization and Shubnikov-de Haas (SdH) oscillations at low temperatures. Angle-dependent SdH oscillations serve as evidence of the realization of a 2D carrier gas in the WTe bundle. The present findings indicate the versatility of TMC nanowires as building blocks to produce electronic systems of desired dimensionality for future functional electronic and energy-harvesting devices.