Realization of a VCO for WLAN applications using 0.35 μm-siGe BICMOS technology
Realization of a VCO for WLAN applications using 0.35 μm-siGe BICMOS technology
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DOI：
10.1002/mmce.v18:5
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发表时间：
2008-09
影响因子：
1.7
通讯作者：
O. Esame;I. Tekin;Y. Gurbuz
中科院分区：
文献类型：
--
作者：
O. Esame;I. Tekin;Y. Gurbuz
本文介绍了一种适用于IEEE 802.11a标准的4.5- 5.8GHz、μ m LC压控振荡器（VCO）。该电路采用奥地利微系统公司0.35 μm SiGe BiCMOS工艺设计，采用高速SiGe异质结双极晶体管（HBT）。根据测量结果，相位噪声为-102.3 dBc-Hz，1 MHz偏移5 GHz的载波频率。一个线性，1300 MHz的调谐范围是利用积累模式变容二极管。由于差分调谐概念的优点，相位噪声相对较低。基频的输出功率根据调谐电压在-1.6到0.9 dBm之间变化。平均二次和三次谐波电平分别为-25和-41 dBm。该电路从3.3 V电源汲取14 mA直流电流，包括缓冲电路，导致总功耗为46.2 mW。该压控振荡器原型在硅衬底上的面积为0.6 mm 2，包括DC和RF焊盘。© 2008 Wiley Periodicals，Inc. Int J RF and Microwave CAE，2008.
In this article, a 4.5–5.8 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with Austria MicroSystems 0.35 μm SiGe BiCMOS process that includes high-speed SiGe heterojunction bipolar transistors (HBTs). According to measurement results, phase noise is -102.3 dBc-Hz at 1 MHz offset from 5 GHz carrier frequency. A linear, 1300 MHz tuning range is obtained utilizing accumulation-mode varactors. Phase noise is relatively low because of the advantage of differential tuning concept. Output power of the fundamental frequency changes between -1.6 and 0.9 dBm depending on the tuning voltage. Average second and third harmonic levels are -25 and -41 dBm, respectively. The circuit draws 14 mA DC current from 3.3 V supply including buffer circuits leading to a total power dissipation of 46.2 mW. The prototype VCO occupies an area of 0.6 mm2 on Si substrate, including DC and RF pads. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2008.