Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures
Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures
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DOI：
10.1149/2.025202esl
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发表时间：
2011
影响因子：
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通讯作者：
Y. Nakano;Y. Irokawa;Y. Sumida;S. Yagi;H. Kawai
中科院分区：
文献类型：
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作者：
Y. Nakano;Y. Irokawa;Y. Sumida;S. Yagi;H. Kawai
我们研究了AlGaN/GaN异质结中的带隙态，考虑到C杂质的掺入，GaN缓冲层的生长条件不同。在1120 ~ 1170 ℃之间，随着GaN缓冲层生长温度的降低，C的掺入量增加.在一致行动，三个特定的深能级位于导带以下的2.07，2.70，和2.323 eV，发现在低生长温度下变得密集显着。因此，这些水平可能是由于Ga空位和/或浅C受体所产生的C杂质掺入，并可能在相互结合。
We have investigated band-gap states in AlGaN/GaN hetero-structures with different growth conditions of GaN buffer layers in view of C impurity incorporation. The C incorporation was enhanced with decreasing the growth temperature of the GaN buffer layer between 1120 and 1170 C. Acting in concert, three specific deep levels located at∼ 2.07,∼ 2.70, and∼ 3.23 eV below the conduction band were found to become dense significantly at the low growth temperature. Therefore, these levels are probably attributable to Ga vacancies and/or shallow C acceptors produced by the C impurity incorporation, and are likely in conjunction with each other.