Numerical Simulations of Amorphous and Polycrystalline Silicon Thin-Film Transistors
Numerical Simulations of Amorphous and Polycrystalline Silicon Thin-Film Transistors
复制标题
非晶硅和多晶硅薄膜晶体管的数值模拟
DOI：
10.1143/jjap.29.l2360
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发表时间：
1990
影响因子：
1.5
通讯作者：
M. F. Willums
中科院分区：
文献类型：
--
作者：
M. Hack;J. Shaw;P. G. Lecomber;M. F. Willums
在本文中，我们展示了非晶硅以及 NMOS 和 PMOS 多晶硅薄膜晶体管的二维数值模拟结果。两种类型的器件均使用有效介质方法进行建模，其中材料中的缺陷和晶界被视为带隙中局域态的空间均匀密度。场效应迁移率是根据适当的能带迁移率自洽计算的，并且使用每种材料的一组参数，我们在输出和传输特性的模拟与实验数据之间获得了非常好的一致性。多晶器件源漏电流的实验激活能也与数值模拟非常吻合。
In this paper we present results of two-dimensional numerical simulations of both amorphous silicon and NMOS and PMOS polycrystalline silicon thin-film transistors. Both types of devices are modeled using an effective medium approach whereby the defects and grain boundaries in the material are treated as a spatially uniform density of localized states in the band gap. The field-effect mobility is self-consistently calculated from the appropriate band mobility and using one set of parameters for each material we obtain very good agreement between simulations of both output and transfer characteristics and experimental data. The experimental activation energy of the source-drain current for the polycrystalline devices is also found to be in excellent agreement with the numerical simulations.