Electrical Properties, Deep Trap and Luminescence Spectra in Semi-Insulating, Czochralski β-Ga2O3 (Mg)
Electrical Properties, Deep Trap and Luminescence Spectra in Semi-Insulating, Czochralski β-Ga2O3 (Mg)
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半绝缘直拉 β-Ga2O3 (Mg) 的电学性质、深陷阱和发光光谱
DOI：
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发表时间：
2019
影响因子：
2.2
通讯作者：
A. Kochkova
中科院分区：
文献类型：
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作者：
A. Polyakov;N. Smirnov;I. Shchemerov;E. Yakimov;S. Pearton;F. Ren;A. Chernykh;D. Gogova;A. Kochkova
研究了直拉法生长的Mg掺杂β -Ga 2 O3的电导率、热激电流（TSC）、光生电流瞬态谱（PICTS）和微阴极发光（MCL）的温度特性。晶体在450 K时的电阻率为4.5 × 1011（cid：2）·cm。在黑暗中的电导率的活化能为1.3 eV。TSC光谱显示深陷阱的激活能为1 eV。在PICTS中，观察到一个活化能为0.8 eV的次峰，两个活化能为1.05 eV和1.35 eV的主峰，以及对应于负光电导的宽带。从偏置极性的峰值振幅的依赖性，1.05 eV的峰值归因于镁相关的空穴陷阱在E v + 1.05 eV。较高的能量峰被分配给电子发射从深电子陷阱在Ec-1.35 eV，钉扎费米能级。光电流谱显示深陷阱与光电离阈值在2 eV和2.3 eV。MCL光谱显示存在具有在3.1eV、2.81eV和2.56eV处的峰值发射能量的陷阱。
The temperature dependence of conductivity, thermally stimulated current (TSC), photoinduced current transient spectroscopy (PICTS) and microcathodoluminescence (MCL) were studied for Czochralski-grown β -Ga 2 O 3 doped with Mg. The crystals had resistivity of 4.5 × 10 11 (cid:2) .cm at 450K. The activation energy of the conductivity in the dark was 1.3 eV. TSC spectra revealed deep traps with activation energy ∼ 1 eV. In PICTS, a minor peak with activation energy ∼ 0.8 eV, two major peaks with activation energy 1.05 eV and 1.35 eV, and a broad band corresponding to negative photoconductivity were observed. From the dependence of the peak amplitude on bias polarity, the 1.05 eV peak was attributed to a Mg-related hole trap at E v + 1.05 eV. The higher energy peak was assigned to electron emission from a deep electron trap at E c -1.35 eV that pins the Fermi level. Photocurrent spectra showed deep traps with optical ionization thresholds at 2 eV and 2.3 eV. MCL spectra showed the presence of traps with peak emission energies at 3.1 eV, 2.81 eV, and 2.56 eV.