Infrared Luminescence of Erbium-silicon-oxide Crystalline Compound on Silicon
Infrared Luminescence of Erbium-silicon-oxide Crystalline Compound on Silicon
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硅上铒硅氧化物晶体化合物的红外发光
DOI:
10.1109/icp.2012.6379863
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发表时间:
2012
期刊:
影响因子:
--
通讯作者:
Y. Kamiura
中科院分区:
文献类型:
--
作者:
T. Ishiyama;M. Higuchi;T. Obata;Y. Kamiura
The photoluminescence (PL) properties of crystalline Er-Si-O compound on silicon substrate prepared using a simple method through evaporation and thermal annealing have been investigated. Diffraction peaks corresponding to crystalline Er-Si-O were clearly detected in X-ray diffraction measurements. Er-related infrared luminescence was observed at around 1.52 μm at room temperature. This luminescence of the crystalline Er-Si-O compound on Si was due not to direct excitation of the 4f shell of Er3+, but to excitation of the host Si, i.e. indirect excitation. The observed luminescence was very intense compared with that of a sample prepared by a wet-chemical method using ErCl3. The Er-related PL spectra also showed several peaks at room temperature, which reflected the splitting patterns of ground manifolds (4I15/2) for the 4f11shell of Er3+. Significant differences in peak wavelengths between the crystalline Er-Si-O compound on Si substrate and Er-doped Si on Si substrate (Si:Er:O/Si) grown by molecular beam epitaxy were observed in the PL spectra at 77 K. In addition, temperature quenching of Er-related infrared luminescence was greatly reduced in the crystalline Er-Si-O compound prepared using the simple method. Finally, a new electron spin resonance spectrum was detected for the crystalline Er-Si-O compound on silicon substrate, thought to be related to the presence of Er atoms in the compound.