Infrared Luminescence of Erbium-silicon-oxide Crystalline Compound on Silicon

Infrared Luminescence of Erbium-silicon-oxide Crystalline Compound on Silicon
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硅上铒硅氧化物晶体化合物的红外发光

DOI:
10.1109/icp.2012.6379863
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发表时间:
2012
期刊:
The proceedings of 3rd International Conference on Photonics 2012
影响因子:
--
通讯作者:
Y. Kamiura
Y. Kamiura
中科院分区:
--
文献类型:
--
作者:
T. Ishiyama;M. Higuchi;T. Obata;Y. Kamiura

文献摘要

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研究了用蒸发和热退火的简单方法在硅衬底上制备的Er-Si-O化合物晶体的光致发光特性。在X射线衍射测量中清楚地检测到对应于结晶Er-Si-O的衍射峰。在室温下,在1.52 μm附近观察到与Er相关的红外发光。晶体Er-Si-O化合物在Si上的这种发光不是由于Er 3+的4f壳层的直接激发,而是由于主体Si的激发,即间接激发。观察到的发光是非常强烈的相比,通过湿化学方法使用ErCl 3制备的样品。在室温下,Er ~(3+)的PL谱也出现了多个峰,反映了Er ~(3+)4f 11壳层基态流形(4 I15/2)的分裂模式。在77 K下,观察到Si衬底上的Er-Si-O化合物晶体和分子束外延生长的掺Er Si衬底(Si:Er:O/Si)的PL谱的峰值波长有显著差异。此外,在使用简单的方法制备的晶体Er-Si-O化合物中,与Er相关的红外发光的温度猝灭被大大降低。最后,在硅衬底上的晶体Er-Si-O化合物中检测到一个新的电子自旋共振谱,认为这与化合物中Er原子的存在有关。
The photoluminescence (PL) properties of crystalline Er-Si-O compound on silicon substrate prepared using a simple method through evaporation and thermal annealing have been investigated. Diffraction peaks corresponding to crystalline Er-Si-O were clearly detected in X-ray diffraction measurements. Er-related infrared luminescence was observed at around 1.52 μm at room temperature. This luminescence of the crystalline Er-Si-O compound on Si was due not to direct excitation of the 4f shell of Er3+, but to excitation of the host Si, i.e. indirect excitation. The observed luminescence was very intense compared with that of a sample prepared by a wet-chemical method using ErCl3. The Er-related PL spectra also showed several peaks at room temperature, which reflected the splitting patterns of ground manifolds (4I15/2) for the 4f11shell of Er3+. Significant differences in peak wavelengths between the crystalline Er-Si-O compound on Si substrate and Er-doped Si on Si substrate (Si:Er:O/Si) grown by molecular beam epitaxy were observed in the PL spectra at 77 K. In addition, temperature quenching of Er-related infrared luminescence was greatly reduced in the crystalline Er-Si-O compound prepared using the simple method. Finally, a new electron spin resonance spectrum was detected for the crystalline Er-Si-O compound on silicon substrate, thought to be related to the presence of Er atoms in the compound.