Graphene nanoribbon as a negative differential resistance device
Graphene nanoribbon as a negative differential resistance device
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石墨烯纳米带作为负微分电阻器件
DOI：
10.1063/1.3126451
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发表时间：
2009-04-27
影响因子：
4
通讯作者：
Yang, Jinlong
中科院分区：
文献类型：
--
作者：
Ren, Hao;Li, Qun-Xiang;Yang, Jinlong
采用密度泛函理论和非平衡绿色函数方法，对扶手椅型石墨烯纳米晶结的电子结构和弹性输运性质进行了理论研究.各种结的I-V特性进行了检查，都表现出强大的负微分电阻（NDR）现象。研究发现，这种负阻现象是由于掺杂引线的窄态密度与散射区的离散态相互作用的结果。
We present a theoretical study on electronic structure and elastic transport properties of armchair graphene nanoribbon based junctions by using density functional theory calculations and nonequilibrium Green's function technique. The I-V characteristics of various junctions are examined, which all exhibit robust negative differential resistance (NDR) phenomena. It is found that such NDR behaviors originate from the interaction between the narrow density of states of the doped leads and the discrete states in the scattering region.