Enhancement in tunnel magnetoresistance effect by inserting CoFeB to the tunneling barrier interface in Co2MnSi/MgO/CoFe magnetic tunnel junctions
Enhancement in tunnel magnetoresistance effect by inserting CoFeB to the tunneling barrier interface in Co2MnSi/MgO/CoFe magnetic tunnel junctions
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DOI：
10.1063/1.3156858
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发表时间：
2009-06
影响因子：
4
通讯作者：
S. Tsunegi;Y. Sakuraba;M. Oogane;H. Naganuma;K. Takanashi;Y. Ando
中科院分区：
文献类型：
--
作者：
S. Tsunegi;Y. Sakuraba;M. Oogane;H. Naganuma;K. Takanashi;Y. Ando
研究了Co2 MnSi/CoFeB（0-2 nm）/MgO/CoFe磁性隧道结（MTJ）的隧道磁电阻（TMR）效应。通过在Co2 MnSi/MgO界面处插入薄的CoFeB层来提高TMR比。CoFeB厚度为0.5 nm的MTJ表现出最高的TMR比。从所制造的MTJ的电导-电压测量，我们推断，在Co2 MnSi中产生的高度自旋极化的电子可以通过0.5 nm厚的CoFeB层保持极化。此外，通过插入薄CoFeB层，由于抑制了Co2 MnSi/MgO界面处的磁矩波动，TMR比的温度依赖性得到改善。
Tunnel magnetoresistance (TMR) effect was investigated in Co2MnSi/CoFeB(0–2 nm)/MgO/CoFe magnetic tunnel junctions (MTJs). TMR ratio was enhanced by inserting a thin CoFeB layer at the Co2MnSi/MgO interface. The MTJ with CoFeB thickness of 0.5 nm exhibited the highest TMR ratio. From the conductance-voltage measurements for the fabricated MTJs, we infer that the highly spin polarized electron created in Co2MnSi can conserve the polarization through the 0.5-nm-thick CoFeB layer. Furthermore, by insertion of the thin CoFeB layer, the temperature dependence of the TMR ratio was improved because of the suppression of the fluctuation of the magnetic moment at the Co2MnSi/MgO interface.