An Inverter-Based Wideband Low-Noise Amplifier in 40 nm Complementary Metal Oxide Semiconductor
An Inverter-Based Wideband Low-Noise Amplifier in 40 nm Complementary Metal Oxide Semiconductor
复制标题
采用 40 nm 互补金属氧化物半导体的基于逆变器的宽带低噪声放大器
DOI：
10.1143/jjap.51.04de07
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发表时间：
2012
影响因子：
1.5
通讯作者：
and Kazuya Masu
中科院分区：
文献类型：
--
作者：
Dayang Nur Salmi Dharmiza;Mototada Oturu;Satoru Tanoi;Hiroyuki Ito;Noboru Ishihara;and Kazuya Masu
多用途无线应用对多标准射频芯片的需求越来越高。然而，在射频电路中，低噪声放大器(LNA)在决定接收机性能方面扮演着重要的角色。本文提出了一种基于互补金属氧化物半导体(CMOS)反相器的可扩展宽带低噪声放大器，采用了两种带宽扩展技术，无需使用电感即可实现高带宽。该低噪声放大器采用40nmCMOS工艺制作，带宽为0.1~8.0 GHz，S 2 1=17.5d B，S 11≤-10 d B。在1.3V电压下测得的最小噪声系数为5.1dB，功耗为14.3 mW。由于不使用大型无源器件，低噪声放大器核心电路仅为0.001 mm2。通过比较采用65、90和180 nm工艺制作的相同拓扑电路的性能，对低噪声放大器的可扩展性进行了研究。
Multistandard RF chips have been highly demanded for multipurpose wireless applications. However, in RF circuits, a low-noise amplifier (LNA) plays an important role in determining the receiver's performance. In this paper, we present a scalable wideband LNA based on complementary metal oxide semiconductor (CMOS) inverters, employing two bandwidth expansion techniques to achieve a large bandwidth without using inductors. Fabricated by the 40 nm CMOS process, the LNA attains 0.1–8.0 GHz of flat bandwidth with S 21= 17.5 dB and S 11≤-10 dB. The minimum NF measured is 5.1 dB and the power consumption is 14.3 mW at 1.3 V. The LNA core circuit is as small as 0.001 mm 2 since no large passive device is used. A study of LNA scalability has been conducted by comparing the performances of circuits with the same topology fabricated by the 65, 90, and 180 nm CMOS processes.