Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs
Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs
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DOI：
10.1063/1.3571289
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发表时间：
2011-03-21
影响因子：
4
通讯作者：
Moodie, D. G.
中科院分区：
文献类型：
--
作者：
Hatem, O.;Cunningham, J.;Moodie, D. G.
我们报告了探测太赫兹频率辐射使用光导天线制造的铁掺杂InGaAs，生长的金属有机化学气相沉积。相干光电导检测证明使用飞秒激光脉冲集中在800或1550 nm的波长。InGaAs的电阻率和光电导探测的灵敏度都被发现依赖于Fe掺杂水平。我们调查了广泛的探测激光功率，发现在检测到的信号峰值类似于5 mW的探测功率，随后在较大的功率减少，由于筛选的检测到的太赫兹场的光生载流子的材料。来自Fe的测量信号：在800 nm处激发的InGaAs光电导探测器比具有相同天线设计的低温生长GaAs光电探测器大四倍，尽管使用了小十倍的探测功率。(C)2011年美国物理学会。[doi：10.1063/1.3571289]
We report the detection of terahertz frequency radiation using photoconductive antennas fabricated from Fe-doped InGaAs, grown by metal-organic chemical vapor deposition. Coherent photoconductive detection is demonstrated using femtosecond laser pulses centered at either an 800 or a 1550 nm wavelength. The InGaAs resistivity and the sensitivity of photoconductive detection are both found to depend on the Fe-doping level. We investigate a wide range of probe laser powers, finding a peak in detected signal for similar to 5 mW probe power, followed by a reduction at larger powers, attributed to screening of the detected THz field by photo-generated carriers in the material. The measured signal from Fe: InGaAs photoconductive detectors excited at 800 nm is four times greater than that from a low-temperature-grown GaAs photodetector with identical antenna design, despite the use of a ten times smaller probe power. (C) 2011 American Institute of Physics. [doi:10.1063/1.3571289]