Tunneling transport in polyoxometalate based composite materials
Tunneling transport in polyoxometalate based composite materials
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DOI：
10.1063/1.1594278
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发表时间：
2003-07
影响因子：
4
通讯作者：
N. Glezos;P. Argitis;D. Velessiotis;C. D. Diakoumakos
中科院分区：
文献类型：
--
作者：
N. Glezos;P. Argitis;D. Velessiotis;C. D. Diakoumakos
将钨多金属氧酸盐作为活性元素嵌入到聚合物基质中的分子材料作为电子器件应用的候选材料被研究。通过改变电极间距和多金属氧酸盐浓度，研究了这些材料的输运性质。平面器件的I-V特性表明，在分子间距小于3 nm，电极间距小于100 nm的室温条件下，存在一个导电峰。从隧穿机制的角度对输运特性进行了讨论。
Molecular materials containing tungsten polyoxometalates as the active elements embedded into polymer matrices are investigated as candidates for electronic device applications. The transport properties of these materials are investigated varying the interelectrode spacing and the polyoxometalate concentration. The I–V characteristics of planar devices reveal a conductivity peak at room temperature conditions for intermolecular distances less than 3 nm and electrode distances less than 100 nm. The transport characteristics are discussed in terms of tunneling mechanisms.