1.5 mu m band travelling-wave semiconductor optical amplifiers with window facet structure

1.5 mu m band travelling-wave semiconductor optical amplifiers with window facet structure
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窗口刻面结构1.5μm波段行波半导体光放大器

DOI:
10.1049/el:19890171
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发表时间:
1989
影响因子:
1.1
通讯作者:
I. Mito
I. Mito
中科院分区:
工程技术4区
文献类型:
--
作者:
I. Cha;M. Kitamura;I. Mito

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研制了具有增透涂层/窗面结构的1.5 μm波段行波光放大器。平均面反射率为0.07%,信号增益为20db,谱增益纹波为1db。窗面的反射率估计低至3×10−5。
1.5 μm band travelling-wave optical amplifiers (TWAs) with antireflection coated/window facet structure have been developed. 0.07% average facet reflectivity and 20 dB signal gain with 1 dB spectral gain ripple was achieved. As low as 3×10−5 reflectivity was estimated for the window facet.