Cleaning of Silicon Surfaces by NF3-Added Hydrogen and Water-Vapor Plasma Downstream Treatment
Cleaning of Silicon Surfaces by NF3-Added Hydrogen and Water-Vapor Plasma Downstream Treatment
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通过添加 NF3 的氢气和水蒸气等离子体下游处理来清洁硅表面
DOI：
10.1143/jjap.35.1022
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发表时间：
1995
影响因子：
1.5
通讯作者：
H. Horiike
中科院分区：
文献类型：
--
作者：
J. Kikuchi;M. Nagasaka;S. Fujimura;H. Horiike
通过添加 NF3 的氢和水蒸气等离子体下游处理，从硅表面去除自然氧化物。从 6 英寸硅片上去除原生氧化物需要 45 秒。傅里叶变换红外衰减全反射（FT-IR ATR）测量表明，下游处理后的表面粗糙度与用2%HF溶液湿洗后的表面粗糙度相同。在经过下游处理清洁的表面上生长硅外延层。尽管工艺温度低至100°C，但目前的下游处理产生了与原位氢退火相同的效果。
Native oxide was removed from silicon surfaces by NF3-added hydrogen and water-vapor plasma downstream treatment. It took 45 s to remove native oxide from a 6-inch silicon wafer. Fourier transform infrared attenuated total reflection (FT-IR ATR) measurement revealed that the surface roughness after the downstream treatment was the same as that after wet cleaning with 2% HF solution. A silicon epitaxial layer was grown on the surface cleaned by the downstream treatment. Although process temperature was as low as 100°C, the present downstream treatment induced the same effect as in situ hydrogen annealing.