Heterogeneous Integration of III-V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics
Heterogeneous Integration of III-V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics
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DOI：
10.1109/ted.2021.3067273
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发表时间：
2021-07-01
影响因子：
3.1
通讯作者：
Zota, Cezar B.
中科院分区：
文献类型：
--
作者：
Caimi, Daniele;Tiwari, Preksha;Zota, Cezar B.
III-V材料，如InGaAs和InP，由于其高载流子迁移率和带隙工程潜力，对高性能电子和光电子学具有很高的吸引力。然而，硅衬底上的集成是实现这些材料广泛采用的关键要求。在这项工作中，III-V材料的直接晶圆键合（DWB）作为硅集成的低温使能技术进行了探索。对于高性能逻辑和射频电子产品，DWB与竞争集成技术相比，由于其相对较低的工艺复杂性和热影响（类似于300摄氏度），显示出更高的器件性能。由于DWB的热冲击小，它也特别适合于三维集成，即多个功能层的垂直堆叠。III-V光电子器件在这样的3-D堆栈中很有吸引力，在那里它们可以实现高效可调谐激光器和硅光子集成电路。本文将DWB与选择性外延作为InP-on-Si微盘激光器的集成途径进行了比较。等离子体也进行了探索，允许缩放集成III-V光子器件超出光的衍射极限。这项工作的结果表明，DWB是一种非常有前途的III-V材料集成路线，用于电子和光电子应用。
III-V materials, such as InGaAs and InP, are highly attractive for high-performance electronics and optoelectronics owning to their high carrier mobilities and potential for bandgap engineering. Integration on silicon substrates, however, is a key requirement to enable widespread adoption of these materials. In this work, direct wafer bonding (DWB) of III-V materials is explored as a low-temperature enabling technology for Si integration. For high-performance logic and RF electronics, DWB is compared to competing integration technologies and is shown to exhibit higher device performance due to its relatively low process complexity and thermal impact (similar to 300 degrees C). Due to the low thermal impact of DWB, it is also uniquely suitable for 3-D integration, i.e., vertical stacking of multiple functional layers. III-V optoelectronics are attractive in such 3-D stacks, where they can enable high-efficiency tunable lasers together with Si photonics integrated circuits. DWB is here compared to selective epitaxy as an integration route for InP-on-Si microdisk lasers. Plasmonics are explored as well, allowing scaling of integrated III-V photonic devices beyond the diffraction limit of light. The results of this work show that DWB is a highly promising integration route for III-V materials for both electronics and optoelectronics applications.