1000 A cm-1 in a 2 μm thick YBa2Cu3O7-x film with BaZrO3 and Y2O3 additions
1000 A cm-1 in a 2 μm thick YBa2Cu3O7-x film with BaZrO3 and Y2O3 additions
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DOI：
10.1088/0953-2048/23/11/115016
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发表时间：
2010-11-01
影响因子：
3.6
通讯作者：
Apodoca, I.
中科院分区：
文献类型：
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作者：
Feldmann, D. M.;Holesinger, T. G.;Apodoca, I.
我们在这里报告的显着改善的内场和自场临界电流密度（J（c））的多层和单层YBa 2Cu 3 O 7-x（YBCO）厚膜与BaZrO 3（BZO）和Y2 O3添加剂。在前一种情况下，复合膜由具有三个YBCO层和两个Y2 O3中间层的五层结构组成，总厚度为1.8 μ m。多层膜在最大洛伦兹力配置的所有场方向上产生4.3 MA cm（-2）（775 A cm（-1））的J（c）（75.6 K，自场）和1.0 MA cm（-2）（175 A cm（-1））的最小J（c）（75.6 K，1 T）。我们在单层2.0 μ m厚的膜中获得了5.2 MA cm（-2）（1010 A/cm-W）的J（c）（75.6 K，自场）和1.2 MA cm（-2）（234 A/cm-W）的最小J（c）（75.6 K，1 T）。对于这两种薄膜，扫描透射电子显微镜和透射电子显微镜成像被用来确定一个均匀分散的第二相微结构组成的短，倾斜的BZO纳米棒和倾斜的Y2 O3纳米粒子层。我们归因于厚YBCO薄膜的性能增强的微观结构的均匀性和两个不同的第二相材料在薄膜生长过程中的相互作用。
We report here on significant improvements to the in-field and self-field critical current densities (J(c)) of multilayer and single-layer YBa2Cu3O7-x (YBCO) thick films with BaZrO3 (BZO) and Y2O3 additions. In the former case, the composite film consisted of a five-layer architecture with three YBCO layers and two Y2O3 interlayers in a total thickness of 1.8 mu m. The multilayer film produced a J(c) (75.6 K, self-field) of 4.3 MA cm(-2) (775 A cm(-1)) and a minimum J(c) (75.6 K, 1 T) of 1.0 MA cm(-2) (175 A cm(-1)) over all field orientations in the maximum Lorentz force configuration. We achieved in a single-layer 2.0 mu m thick film a J(c) (75.6 K, self-field) of 5.2 MA cm(-2) (1010 A/cm-w) and a minimum J(c) (75.6 K, 1 T) of 1.2 MA cm(-2) (234 A/cm-w) in the same measurement configuration. For both kinds of films, scanning transmission electron microscopy and transmission electron microscopy imaging were used to identify a uniformly dispersed second-phase microstructure consisting of short, tilted BZO nanorods and tilted Y2O3 nanoparticle layers. We attribute the enhanced performance of the thick YBCO films to the uniformity of the microstructure and the interaction of two different second-phase materials during film growth.