A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate
A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate
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一种新型栅极-双金属栅极正向隧道场效应晶体管
DOI：
10.1109/jeds.2018.2864581
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发表时间：
2018
影响因子：
2.3
通讯作者：
Zhao Qing
中科院分区：
文献类型：
--
作者：
S. Glass;Kimihiko Kato;L. Kibkalo;J. Hartmann;S. Takagi;D. Buca;S. Mantl;Zhao Qing
在这个实验和模拟相结合的研究中，我们研究了一种基于SiGe/Si的栅极隧道场效应晶体管（TFET），该晶体管与隧道结具有柱状接触，具有两个显著的优点。首先，改进了隧道结边界处的静电，这有助于减少不利隧道路径的影响，从而大大提高了器件的导通。第二种是采用自对齐工艺简化双金属栅极的制造。实验证明了该工艺的可行性，并展示了双金属栅极的积极效果。总的来说，本文提供了改善不受材料系统限制的栅极法向tfet的亚阈值摆幅的一般准则。
In this combined experiment and simulation study we investigate a SiGe/Si based gatenormal tunneling field-effect transistor (TFET) with a pillar shaped contact to the tunneling junction which brings forth two significant advantages. The first, is improved electrostatics at the boundary of the tunneling junction which helps to diminish the influence of adverse tunneling paths, and thus, substantially sharpens the device turn on. The second, is a simplified fabrication of a dual-metal gate using a selfaligned process. We demonstrate the feasibility of the process and show the positive effect of a dual-metal gate in experiment. Overall the paper provides general guidelines for the improvement of the subthreshold swing in gate-normal TFETs which are not restrained to the material system.