InP nanowire light-emitting diodes with different pn-junction structures
InP nanowire light-emitting diodes with different pn-junction structures
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不同pn结结构的InP纳米线发光二极管
DOI：
10.1088/1361-6528/ac659a
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发表时间：
2022
期刊：
影响因子：
3.5
通讯作者：
Tomioka K
中科院分区：
文献类型：
--
作者：
Kimura S;Gamo H;Katsumi Y;Motohisa J;Tomioka K
我们报道了纤锌矿(WZ)InP纳米线(NW)不同pn结(轴向和径向)发光二极管(LED)的特性。采用核壳结构的径向pn结的NW-LED的串联电阻比采用轴向pn结的NW-LED的串联电阻小，这表明径向pn结更适合于电流注入。两种NW LED的电致发光特性表明，电致发光有三个峰，分别来自闪锌矿(ZB)相、WZ相和ZB/WZ异质结。透射电子显微镜显示，径向pn结中的主要电致发光来自穿过层错的ZB/WZ界面。
We report on the characterization of wurtzite (WZ) InP nanowire (NW) light-emitting diodes (LEDs) with different pn junctions (axial and radial). The series resistance tended to be smaller in the NW-LED using core–shell InP NWs with a radial pn junction than in the NW-LED using InP NWs with an axial pn junction, indicating that radial pn junctions are more suitable for current injection. The electroluminescence (EL) properties of both NW LEDs revealed that the EL had three peaks originating from the zinc-blende (ZB) phase, WZ phase, and ZB/WZ heterojunction. Transmission electron microscopy showed that the dominant EL in the radial pn junction originated from the ZB/WZ interface across the stacking faults.