Preparation and Dielectric Properties of the Multilayer Capacitor with (Ba, Sr)TiO3 Thin Layers by Metalorganic Chemical Vapor Deposition
Preparation and Dielectric Properties of the Multilayer Capacitor with (Ba, Sr)TiO3 Thin Layers by Metalorganic Chemical Vapor Deposition
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DOI：
10.1143/jjap.36.5870
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发表时间：
1997-09
影响因子：
1.5
通讯作者：
Y. Takeshima;K. Shiratsuyu;Hiroshi Takagi Hiroshi Takagi-Hiroshi-Takagi;Yukio Sakabe Yukio Sakabe-Yukio-Sakabe
中科院分区：
文献类型：
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作者：
Y. Takeshima;K. Shiratsuyu;Hiroshi Takagi Hiroshi Takagi-Hiroshi-Takagi;Yukio Sakabe Yukio Sakabe-Yukio-Sakabe
采用金属有机物化学气相沉积（MOCVD）方法，在Pt包覆的MgO单晶衬底（Pt（111）/MgO（100）和Pt（100）/MgO（100））上，于650° C制备了钛酸锶钡（（Ba，Sr）TiO 3; BST）薄膜。得到了钙钛矿结构的BST薄膜。它们的室温介电常数在100 mV和1 kHz下测量为400-590。在3V下漏电流密度低于10- 7A/cm ~ 2量级，击穿场强大于500 kV/cm。此外，制备了具有五层BST的多层电容器。在100 mV和1 kHz下，有效电极面积为0.16 mm 2的室温电容为20 nF。漏电流在1V时为10- 8A的量级，在3V时为10- 5A的量级。
Barium strontium titanate ( (Ba, Sr)TiO3; BST) thin films were prepared on Pt-coated magnesium oxide single-crystal substrates (Pt(111)/MgO(100) and Pt(100)/MgO(100)) at 650° C by metalorganic chemical vapor deposition (MOCVD). The BST films with a perovskite single phase were obtained. Their room-temperature dielectric constant was 400–590 measured at 100 mV and 1 kHz. The leakage current density was below the order of 10-7 A/cm2 at 3 V, and the breakdown field was above 500 kV/cm. In addition, the multilayer capacitor with five layers of BST was prepared. The room-temperature capacitance with an effective electrode area of 0.16 mm2 was 20 nF at 100 mV and 1 kHz. The leakage current was on the order of 10-8 A at 1V, and on order of 10-5 A at 3 V.