Comparison and statistical analysis of four write stability metrics in bulk CMOS static random access memory cells
Comparison and statistical analysis of four write stability metrics in bulk CMOS static random access memory cells
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DOI：
10.7567/jjap.54.04dc09
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发表时间：
2015-04
影响因子：
1.5
通讯作者：
Hao Qiu;T. Mizutani;T. Saraya;T. Hiramoto
中科院分区：
文献类型：
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作者：
Hao Qiu;T. Mizutani;T. Saraya;T. Hiramoto
The commonly used four metrics for write stability were measured and compared based on the same set of 2048 (2k) six-transistor (6T) static random access memory (SRAM) cells by the 65 nm bulk technology. The preferred one should be effective for yield estimation and help predict edge of stability. Results have demonstrated that all metrics share the same worst SRAM cell. On the other hand, compared to butterfly curve with non-normality and write N-curve where no cell state flip happens, bit-line and word-line margins have good normality as well as almost perfect correlation. As a result, both bit line method and word line method prove themselves preferred write stability metrics.
