Impact of Electric Field Disorder on Broken-Symmetry States in Ultraclean Bilayer Graphene
Impact of Electric Field Disorder on Broken-Symmetry States in Ultraclean Bilayer Graphene
复制标题
电场无序对超净双层石墨烯破缺对称态的影响
DOI:
10.1021/acs.nanolett.2c02119
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发表时间:
2022
期刊:
影响因子:
10.8
通讯作者:
Weitz, R. Thomas
中科院分区:
文献类型:
--
作者:
Geisenhof, Fabian R.;Winterer, Felix;Seiler, Anna M.;Lenz, Jakob;Zhang, Fan;Weitz, R. Thomas
Bilayer graphene (BLG) has multiple internal degrees of freedom and a constant density of states down to the charge neutrality point when trigonal warping is ignored. Consequently, it is susceptible to various competing ground states. However, a coherent experimental determination of the ground state has been challenging due to the interaction–disorder interplay. Here we present an extensive transport study in a series of dually gated freestanding BLG devices and identify the layer-antiferromagnet as the ground state with a continuous strength across all devices. This strength correlates with the width of the state in the electric field. We systematically identify electric-field disorder─spatial variations in the interlayer potential difference─as the main source responsible for the observations. Our results pinpoint for the first time the importance of electric-field disorder on spontaneous symmetry breaking in BLG and solve a long-standing debate on its ground state. The electric-field disorder should be universal to all 2D materials.