Self-assembly of well-aligned gallium-doped zinc oxide nanorods
Self-assembly of well-aligned gallium-doped zinc oxide nanorods
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DOI：
10.1063/1.1608473
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发表时间：
2003-09
影响因子：
3.2
通讯作者：
M. Yan;H. Zhang;E. J. Widjaja;R. Chang
中科院分区：
文献类型：
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作者：
M. Yan;H. Zhang;E. J. Widjaja;R. Chang
采用脉冲激光沉积法在GaN和蓝宝石衬底上制备了高度取向的Ga掺杂ZnO纳米棒阵列。X射线衍射表明，这些纳米棒的外延生长的c轴垂直于衬底。ZnO纳米棒的形成如下进行。当ZnO薄膜的润湿层生长到约14 nm厚时，由于界面应变的作用，发生了Sttranski-Krastanov不稳定性。结果，在ZnO层上均匀地形成ZnO纳米点。然后，这些纳米点用作随后的电场辅助纳米棒生长的成核位点。Ga掺杂水平对ZnO纳米棒的形成起着关键作用，而氧分压和衬底温度也影响纳米棒的形貌。这些自组装有序的ZnO纳米棒阵列可用于场发射和光电应用。
Highly oriented Ga-doped ZnO nanorod arrays have been fabricated on GaN and sapphire substrates by pulsed laser deposition. X-ray diffraction shows that these nanorods are grown epitaxially with the c-axis normal to the substrate. The ZnO nanorod formation proceeds as follows. After a wetting layer of ZnO film grows to approximately 14 nm in thickness, the Stranski–Krastanov instability takes place due to interface strain. As a result, ZnO nanodots are formed uniformly on the ZnO layer. These nanodots then serve as nucleation sites for the subsequent electric-field-assisted growth of nanorods. Ga-doping level plays a key role in the formation of ZnO nanorods, while the oxygen partial pressure and the substrate temperature also affect the morphology of nanorods. These self-assembled and ordered ZnO nanorod arrays may be used in field emission and optoelectronic applications.