Fabrication of Nano Electron Source Using Beam-Assisted Process
Fabrication of Nano Electron Source Using Beam-Assisted Process
复制标题
使用束辅助工艺制造纳米电子源
DOI：
10.1143/jjap.42.4037
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发表时间：
2002
影响因子：
1.5
通讯作者：
M. Takai
中科院分区：
文献类型：
--
作者：
K. Murakami;W. Jarupoonphol;Kazuaki Sakata;M. Takai
提出了一种利用电子束（EB）或聚焦离子束（FIB）化学反应的场发射电子源的新结构和制作工艺。使用这些工艺可以自由地制造各种栅极直径和发射极高度。在正硅酸乙酯（TEOS）气氛中，通过使用EB或FIB的化学反应在Si衬底上沉积环形绝缘体。然后在甲基三甲基铂[C5H5Pt（CH3）3]气氛中使用EB在绝缘体环上沉积Pt栅极。以相同的方式将Pt发射极沉积到环形栅极开口中。在最快的工艺中，仅使用EB诱导反应，可以在189 s内制造出栅极直径为300 nm和阴极高度为500 nm的电子源结构。
A new structure and the fabrication processes of a field emission electron source using chemical reactions by an electron beam (EB) or a focused ion beam (FIB) were proposed. Various gate diameters and emitter heights can freely be fabricated using these processes. An insulator of ring shape was deposited on a Si substrate by chemical reactions using EB or FIB in a tetraethyl orthosilicate (TEOS) atmosphere. A Pt gate was then deposited on the insulator ring using EB in a methyl cyclopentadienyl trimethyl platinum [C5H5Pt(CH3)3] atmosphere. A Pt emitter was deposited into the ring gate opening in the same way. In the quickest process, an electron-source structure with a gate diameter of 300 nm and a cathode height of 500 nm could be fabricated in 189 s using only an EB-induced reaction.