Current–Voltage Characteristics of γ-Al2O3/epi-Si Resonant Tunneling Diodes with Different Quantum Well Thicknesses
Current–Voltage Characteristics of γ-Al2O3/epi-Si Resonant Tunneling Diodes with Different Quantum Well Thicknesses
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不同量子阱厚度γ-Al2O3/外延硅谐振隧道二极管的电流-电压特性
DOI：
10.1143/jjap.44.4795
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发表时间：
2005
影响因子：
1.5
通讯作者：
M. Ishida
中科院分区：
文献类型：
--
作者：
Halima Khatun Mosammat;M. Shahjahan;R. Ito;K. Sawada;M. Ishida
研究了不同阱厚和不同势垒厚度的γ-Al 2 O3/外延硅异质结双势垒共振隧穿二极管（DBRTD）的制备。研究了DBRTD的电流-电压特性，确定了室温下最大峰谷电流比（PVCR）的峰谷电流比与量子阱厚度之间的关系，以及峰值电流密度与势垒厚度之间的关系。在这项研究中，我们证实了在室温下的最大峰谷电流比为26，量子阱（epi-Si）厚度为3 nm，势垒（γ-Al 2 O3）厚度为2 nm。的理论和实验的峰值电压位置之间的比较进行了一个负微分电阻，表明良好的协议。获得了几mA/cm 2的较低的峰值电流密度。
The fabrication of double-barrier resonant tunneling diodes (DBRTDs) using γ-Al2O3/epitaxial-Si heterostructures with different well thicknesses and different barrier thicknesses was studied. Current–voltage characteristics of the DBRTDs were investigated to determine the relationships between the peak-to-valley current ratio and the quantum well thickness, and between the peak current density and the barrier thickness for the maximum peak-to-valley current ratio (PVCR) at room temperature. In this study, we confirmed a maximum peak-to-valley current ratio of 26 at room temperature with a quantum well (epi-Si) thickness of 3 nm and a barrier (γ-Al2O3) thickness of 2 nm. A comparison between the theoretical and experimental peak voltage positions for a negative differential resistance was performed, indicating good agreement. A lower peak current density of few mA/cm2 was obtained.