Surface, bulk, and interface electronic properties of nonpolar InN
Surface, bulk, and interface electronic properties of nonpolar InN
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DOI：
10.1063/1.3488821
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发表时间：
2010-09-13
影响因子：
4
通讯作者：
McConville, C. F.
中科院分区：
文献类型：
--
作者：
Linhart, W. M.;Veal, T. D.;McConville, C. F.
用X射线光电子能谱、红外反射率和表面空间电荷计算研究了a平面和m平面InN的电子性质。在非极性InN的表面观察到电子的积累，并且发现表面的费米能级比以前在InN样品上观察到的要低。在每个非极性InN样品中，靠近与GaN界面的InN中都有高的电子密度。(C)2010年美国物理研究所。[DOI：10.1063/1.3488821]
The electronic properties of a-plane and m-plane InN have been investigated by x-ray photoemission spectroscopy, infrared reflectivity, and surface space-charge calculations. Electron accumulation has been observed at the surface of nonpolar InN and the surface Fermi level has been found to be lower than previously observed on InN samples. A high electron density in the InN close to the interface with GaN was found in each nonpolar InN sample. (c) 2010 American Institute of Physics. [doi:10.1063/1.3488821]