Effect of excess oxygen on the electrical properties of transparent p-type conducting CuAlO2+x thin films
Effect of excess oxygen on the electrical properties of transparent p-type conducting CuAlO2+x thin films
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DOI：
10.1016/j.solmat.2005.01.003
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发表时间：
2005-10
影响因子：
6.9
通讯作者：
A. Banerjee;C. Ghosh;K. Chattopadhyay
中科院分区：
文献类型：
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作者：
A. Banerjee;C. Ghosh;K. Chattopadhyay
缺陷化学在透明cualo2薄膜的p型导电性中起着重要作用。p-CuAlO2+薄膜的空穴导电性增强的原因是在晶体位置或间隙位置存在过量的氧原子。这些多余的氧原子是由薄膜在氧气气氛中沉积后退火引起的。对膜的成分分析证实膜内存在非化学计量（过量）氧。随着沉积后退火时间的延长，p-CuAlO2+薄膜中嵌入了越来越多的氧原子。电导率测量表明，随着膜内过量氧含量的增加，p型电导率也随之增加。这一观察结果支持了由于过量氧原子导致CuAlO2+ x薄膜中p型导电的起源。
Defect chemistry plays an important role in the p-type conductivity of transparent CuAlO2thin films. Presence of excess oxygen atoms within the crystallites sites or interstitial sites is responsible for the enhanced hole-conductivity of p-CuAlO2+xthin films. These excess oxygen atoms within the films were induced by post-deposition annealing of the films in oxygen atmosphere. Composition analyses of the films confirmed the presence of nonstoichiometric (excess) oxygen within the films. With increase in the post-deposition annealing time, more and more oxygen atoms were intercalated within the p-CuAlO2+xthin films. Electrical conductivity measurements of the films indicated that with increase in the excess oxygen contents within the films, the p-type conductivity also increased. This observation supports the origin of p-type conduction in CuAlO2+xthin films due to excess oxygen atoms.