Resistivity recovery in austenitic Fe-Cr-Ni alloys neutron irradiated at 23K
Resistivity recovery in austenitic Fe-Cr-Ni alloys neutron irradiated at 23K
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DOI：
10.1088/0305-4608/11/4/009
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发表时间：
1981-04
期刊：
影响因子：
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通讯作者：
C. Dimitrov;M. Tenti;O. Dimitrov
中科院分区：
文献类型：
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作者：
C. Dimitrov;M. Tenti;O. Dimitrov
研究了两种高纯度奥氏体 Fe-Cr-Ni 合金以及 Si 和 Ti 掺杂样品在 23K 中子辐照后的电阻率退火情况。电阻率变化（低于 190K 时降低，190 至 600K 之间升高，以及 600K 以上降低）可以用缺陷湮灭和短程有序来理解。似乎发生了以下过程：近对复合和相关缺陷湮灭（35-190K），间隙和空位的长程迁移（190-460K），从团簇或复合物中释放点缺陷（460-700K），自扩散（700K以上）。结论是，移动性较大的缺陷在相对较高的温度（190K以上）下会长距离迁移，它被硅原子强烈捕获，并且与钛原子仅发生微弱的相互作用。
The annealing of the electrical resistivity of two high-purity austenitic Fe-Cr-Ni alloys, and of Si- and Ti-doped samples has been investigated after neutron irradiation at 23K. The resistivity variations (a decrease below 190K, an increase between 190 and 600K, and a decrease above 600K) can be understood in terms of defect annihilation and short-range ordering. The following processes appear to take place: close-pair recombination and correlated defect annihilation (35-190K), long-range migration of interstitials and vacancies (190-460K), release of point defects from clusters or complexes (460-700K), self diffusion (above 700K). It is concluded that the more mobile defect migrates at long distances at a relatively high temperature (above 190K), that it is strongly trapped by silicon atoms, and that it interacts only weakly with titanium atoms.