Improved flux‐pinning properties of REBa2Cu3O7–z films by low‐level Co doping
Improved flux‐pinning properties of REBa2Cu3O7–z films by low‐level Co doping
复制标题
DOI：
10.1002/pssa.201026576
复制
发表时间：
2011-09
期刊：
影响因子：
--
通讯作者：
Wentao Wang;M. Pu;Wen Wang;M. Lei;C. H. Cheng;Yong Zhao;Yong Zhao
中科院分区：
文献类型：
--
作者：
Wentao Wang;M. Pu;Wen Wang;M. Lei;C. H. Cheng;Yong Zhao;Yong Zhao
采用自行研制的无氟化学溶液沉积(CSD)方法在(00l)LaAlO_3衬底上制备了REBa2Cu3-xCoxO7-z(RE=Gd，Y)双向织构薄膜。低水平的Co掺杂显著提高了REBa2Cu3-xCoxO7-z薄膜的场中Jc值。共掺杂的GdBa2Cu3O7-z薄膜在较高的温度和电场下表现出最高的Jc值，而在较低的温度和电场下，共掺杂的YBa2Cu3O7-z薄膜的Jc值超过了其他薄膜。此外，在外场作用下，Co掺杂薄膜的体钉扎力密度明显提高，表明其磁通钉扎性能得到了改善。对可能的原因进行了详细的讨论。
Biaxially textured REBa2Cu3–xCoxO7–z (RE = Gd,Y) films were prepared on (00l) LaAlO3 substrate using self‐developed fluorine‐free chemical solution deposition (CSD) approach. The in‐field Jc values are significantly improved for REBa2Cu3–xCoxO7–z films through low‐level Co doping. Co‐doped GdBa2Cu3O7–z film shows the highest Jc values at higher temperatures and fields, whereas the Jc values of Co‐doped YBa2Cu3O7–z film surpass that of other films at lower temperatures and fields. In addition, the volume pinning force densities of films with Co doping have been distinctly enhanced in the applied fields, indicating improved flux‐pinning properties. The possible reasons are discussed in detail.