Room temperature laser emission of 1.5 μm from InAs/InP(311)B quantum dots
Room temperature laser emission of 1.5 μm from InAs/InP(311)B quantum dots
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DOI：
10.1088/0268-1242/17/2/102
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发表时间：
2002-02
影响因子：
1.9
通讯作者：
C. Paranthoen;N. Bertru;B. Lambert;O. Dehaese;A. Corre;J. Even;S. Loualiche;F. Lissillour;G. Moreau;J. Simon
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文献类型：
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作者：
C. Paranthoen;N. Bertru;B. Lambert;O. Dehaese;A. Corre;J. Even;S. Loualiche;F. Lissillour;G. Moreau;J. Simon
报道了生长在InP（311）B衬底上的InAs量子点的1.5 μm激光发射。的光学波长发射的控制是通过一个两步修改的生长过程，称为“双帽”程序。这使我们能够从InAs/InP（311）B量子点获得1.55 μm的光发射，具有窄的高度色散。在室温下，用光激发，在六层InAs量子点样品上实现了激光发射。激光已经在激发态上获得，对于10 kW cm-2的低光激发密度。这表明QD激光器可以在光通信波长处发射。
We report on the 1.5 μm laser emission from InAs quantum dots (QDs) grown on a InP(311)B substrate. The control of the optical wavelength emission is obtained by a two-step modified growth procedure, called the 'double cap' procedure. This enables us to obtain a 1.55 μm optical emission from InAs/InP(311)B QDs, with a narrow height dispersion. Laser emission on a six-stacked InAs QD layer sample has been demonstrated with optical excitation at room temperature. Lasing has been obtained on an excited state, for a low optical excitation density of 10 kW cm−2. This shows that a QD laser could emit at the optical telecommunication wavelength.