Microstructure and Electrical Properties of Nonstoichiometric Strontium Titanate Thin Films Grown on Platinum Electrodes
Microstructure and Electrical Properties of Nonstoichiometric Strontium Titanate Thin Films Grown on Platinum Electrodes
复制标题
铂电极上生长的非化学计量钛酸锶薄膜的微观结构和电学性能
DOI：
10.1143/jjap.40.1310
复制
发表时间：
2001
影响因子：
1.5
通讯作者：
M. Fujimoto
中科院分区：
文献类型：
--
作者：
K. Morito;Toshimasa Suzuki;M. Fujimoto
采用射频溅射法在Si衬底上制备了Pt电极（Pt/Ta/SiO2/Si），并在低温和高温（分别为250°C和600°C）下制备了Sr/Ti比为0.9 ~ 1.4的非化学计量比钛酸锶薄膜。研究了非化学计量比SrTiO_3薄膜的绝缘和介电性能随Sr/Ti比的变化。SrO略微过量的SrTiO 3薄膜具有最高的介电常数，与沉积温度无关;与化学计量比样品相比，该薄膜表现出更好的绝缘性能，而由SrTiO 3晶相和Ti过量非晶相组成的TiO 2过量SrTiO 3薄膜的绝缘性能显着依赖于沉积温度。高温沉积导致更好的绝缘电阻。
Nonstoichiometric strontium titanate films with the Sr/Ti ratio ranging from 0.9 to 1.4 were grown on Pt electrodes fabricated on Si substrates (Pt/Ta/SiO2/Si) by the RF-sputtering method with low and high deposition temperatures (250°C and 600°C, respectively). The insulating and dielectric properties of nonstoichiometric SrTiO3 films have been studied as a function of Sr/Ti ratio. The highest dielectric constant was obtained by a SrTiO3 film with a slight excess of SrO independent of the deposition temperature; the film showed better insulating property in comparison with the stoichiometric specimen, while the insulating property of TiO2-excess SrTiO3 films, consisting of SrTiO3 crystalline phase and Ti excess amorphous phase, notably depended on the deposition temperature. The high-temperature deposition resulted in better insulative resistance.