Strain-tuning of domain walls in multilayer graphene probed in the quantum Hall regime
Strain-tuning of domain walls in multilayer graphene probed in the quantum Hall regime
复制标题
DOI：
10.1103/physrevb.105.l081408
复制
发表时间：
2022-02-14
影响因子：
3.7
通讯作者：
Ojeda-Aristizabal，Claudia
中科院分区：
文献类型：
--
作者：
Anderson，Paul;Huang，Yifan;Ojeda-Aristizabal，Claudia
畴壁，定义多层石墨烯中不同堆叠顺序的区域之间的边界的拓扑缺陷，已被证明具有令人兴奋的物理学。在电子输运实验中调整这些拓扑缺陷的能力，在对畴壁的基本理解以及电子应用方面带来了丰富的可能性。在这里，我们证明，通过MEMS（微机电系统）致动器和磁阻测量，在多层石墨烯量子霍尔效应的磁畴壁的效果。可逆和受控的单轴应变触发拓扑缺陷，表现为额外的量子霍尔效应平台以及跨器件的电流的离散和可逆调制。我们的研究结果得到了理论计算的支持，并构成了通过电子输运探测多层石墨烯中拓扑缺陷的原位调节的指示，为在电子应用中使用可逆拓扑缺陷开辟了道路。
Domain walls, topological defects that define the frontier between regions of different stacking order in multilayer graphene, have proved to host exciting physics. The ability to tune these topological defectsin situin an electronic transport experiment brings a wealth of possibilities in terms of fundamental understanding of domain walls as well as for electronic applications. Here, we demonstrate, through a MEMS (microelectromechanical system) actuator and magnetoresistance measurements, the effect of domain walls in multilayer graphene quantum Hall effect. Reversible and controlled uniaxial strain triggers the topological defects, manifested as addtional quantum Hall effect plateaus as well as a discrete and reversible modulation of the current across the device. Our findings are supported by theoretical calculations and constitute indication of thein situtuning of topological defects in multilayer graphene probed through electronic transport, opening the way for the use of reversible topological defects in electronic applications.