Further Insights in TFET Operation
Further Insights in TFET Operation
复制标题
DOI：
10.1109/ted.2014.2325600
复制
发表时间：
2014-08-01
影响因子：
3.1
通讯作者：
Cristoloveanu, Sorin
中科院分区：
文献类型：
--
作者：
Villalon, Anthony;Le Carval, Gilles;Cristoloveanu, Sorin
本文在能带图分析和系统测量的基础上，对隧道场效应晶体管（TFFET）的输出特性进行了全面的描述。我们表明，这两个隧道结必须同时考虑正确解释TFET的行为。首次提出并详细研究了TFTs的非截断I-D（V-D）测量。我们证明，两个隧道结之间的竞争解释了这些实验。提供了关于I-D（V-G）和I-D（V-D）曲线之间的联系的见解，这揭示了器件中隧穿电流的起源。我们的理论也使澄清以前报道的I-D（V-D）的结果。
Based on the band diagram analysis and systematic measurements, comprehensive description of the output characteristics of tunnel FETs (TFETs) operation is proposed. We show that both tunneling junctions have to be considered simultaneously to explain TFET behavior correctly. For the first time, we present and investigate in detail untruncated I-D(V-D) measurements of TFETs. We prove that competition between the two tunneling junctions explains these experiments. Insights on the links between I-D(V-G) and I-D(V-D) curves are provided, which reveal the origin of the tunneling current in the device. Our theory also enables to clarify previously reported I-D(V-D) results.