Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties
Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties
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DOI：
10.1021/nl2031037
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发表时间：
2011-12-01
期刊：
影响因子：
10.8
通讯作者：
Vyalikh, D. V.
中科院分区：
文献类型：
--
作者：
Usachov, D.;Vilkov, O.;Vyalikh, D. V.
提出了一种从均三嗪分子大规模高效生长氮掺杂石墨烯的新策略。生长过程已被揭露在原位使用随时间变化的光电发射。已经确定的是，在金插层之后的N-石墨烯的退火后处理导致N环境从吡啶到石墨的转化，从而允许获得超过8096的石墨形式的所有嵌入的氮，这对于石墨烯中的电子掺杂是必要的。一个带隙，300 meV的掺杂水平，和电荷载流子浓度的类似的8 × 10（12）电子每厘米2，诱导0.4原子%的石墨氮，已被检测到的角度分辨光发射光谱，这提供了很大的希望，在下一代电子器件中实现该系统。
A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.