Numerical study of effect of scattering process on transport properties in Bi nanowires
Numerical study of effect of scattering process on transport properties in Bi nanowires
复制标题
散射过程对Bi纳米线输运特性影响的数值研究
DOI：
10.1007/s11664-010-1426-7
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发表时间：
2011
影响因子：
2.1
通讯作者：
Yasuhiro Hasegawa
中科院分区：
文献类型：
--
作者：
Yuki Ichige;Tsuyoshi Matsumoto;Takashi Komine;Ryuji Sugita;Tomosuke Aono;Masayuki Murata;Daiki Nakamura;Yasuhiro Hasegawa
In this study, we investigated the effects of scattering on the transport properties of Bi nanowires. The electrical conductivities and Seebeck coefficients of Bi nanowires were calculated using the Boltzmann equation, with an energy-dependent relaxation time corresponding to the scattering process. Decreasing the wire diameter increased the Seebeck coefficient for all of the scattering processes examined, because a semimetal–semiconductor transition occurred. In 80-nm-diameter nanowires, the Seebeck coefficient for ionized impurity scattering was larger than that of the acoustic deformation potential. On the other hand, in 20-nm-diameter nanowires, the dependence of the Seebeck coefficient on the scattering process was negligible, compared with the influence of wire diameter.
