Molecular beam epitaxy growth of GaN on C-terminated 6H–SiC (0001¯) surface
Molecular beam epitaxy growth of GaN on C-terminated 6H–SiC (0001¯) surface
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C 端接 6H–SiC (0001´) 表面上 GaN 的分子束外延生长
DOI：
10.1063/1.1318723
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发表时间：
2000
影响因子：
4
通讯作者：
S. Huang
中科院分区：
文献类型：
--
作者：
Z. Guan;A. Cai;J. Cabalu;H. Porter;S. Huang
我们报告的结果，成功地生长GaN上的C-终止的SiC表面。采用直接加热和氢等离子体处理的组合进行表面制备。高品质的外延实现了薄至2000 A的外延层，证明了由X-射线衍射半峰宽为90弧秒和4.2 K施主束缚激子峰宽为1.4毫电子伏。 的外延层表现出明确的签名的压缩应变，这表明一个更有利的生长模式比可以实现的Si-终止的表面上。
We report the results of successful growth of GaN on the C-terminated surface of SiC. A combination of direct heating and hydrogen plasma treatment was employed for surface preparation. High-quality epitaxy was achieved in epilayers as thin as 2000 A, as evidenced by the x-ray diffraction full width at half maximum of 90 arc sec and 4.2 K donor-bound exciton peak width of 1.4 meV. The epilayers exhibit clear signatures of compressive strain, suggesting a more favorable growth mode than can be achieved on the Si-terminated surface.