Room-temperature electron spin dynamics in free-standing ZnO quantum dots

Room-temperature electron spin dynamics in free-standing ZnO quantum dots
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DOI:
10.1103/physrevlett.98.186804
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发表时间:
2007-05-04
影响因子:
8.6
通讯作者:
Gamelin, Daniel R.
Gamelin, Daniel R.
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
Liu, William K.;Whitaker, Kelly M.;Gamelin, Daniel R.

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用光化学方法制备了ZnO胶体量子点中的导带电子,并用电子顺磁共振谱对其进行了研究。含有单个S-壳层导带电子的4.6 nm直径的纳米晶体具有g(*)=1.962和T-2*=25 ns的室温系综自旋退相时间,如从线宽分析确定的。增加电子布居导致g(*)增加和T-2* 降低,两者都与P-壳层构型的形成有关。观察到T-2* 和与Zn-67(I=5/2)的超精细耦合之间的明确关系。
Conduction band electrons in colloidal ZnO quantum dots have been prepared photochemically and examined by electron paramagnetic resonance spectroscopy. Nanocrystals of 4.6 nm diameter containing single S-shell conduction band electrons have g(*)=1.962 and a room-temperature ensemble spin-dephasing time of T-2*=25 ns, as determined from linewidth analysis. Increasing the electron population leads to increased g(*) and decreased T-2*, both associated with formation of P-shell configurations. A clear relationship between T-2* and hyperfine coupling with Zn-67(I=5/2) is observed.