Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells
Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells
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InP量子点与拉伸应变In0.46Ga0.54P量子阱耦合的可见光谱（645 nm）横向电场激光操作
DOI：
10.1063/1.1645674
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发表时间：
2004
影响因子：
4
通讯作者：
R. Dupuis
中科院分区：
文献类型：
--
作者：
G. Walter;J. Elkow;N. Holonyak;R. Heller;X. Zhang;R. Dupuis
数据展示了单层压缩应变 3.75 单层等效 InP 量子点 (QD) 与 60 A 宽拉伸应变 In0.46Ga0.54P 量子阱 (QW) 耦合的连续波室温横向电场 (TE) 可见光谱 (645 nm) 异质结构激光操作。尽管存在两个相互竞争的复合系统的耦合，但简单的条带几何形状（200 μm×4 μm）InP QD+InGaP QW异质结构激光器仍具有高性能。 InP QD+InGaP QW激光器具有低阈值（~31 mA）、高量子效率（72%，~1.38 mW/mA）、相对较高的特征温度T0（69 K）以及0.19 nm/°C的波长偏移。
Data are presented that demonstrate the continuous wave room-temperature transverse-electric field (TE) visible-spectrum (645 nm) heterostructure laser operation of single-layer compressively strained 3.75 monolayer equivalent InP quantum dots (QDs) coupled to 60 A wide tensile-strained In0.46Ga0.54P quantum wells (QWs). The simple stripe geometry (200 μm×4 μm) InP QD+InGaP QW heterostructure laser is capable of high performance despite the coupling of two competing recombination systems. The InP QD+InGaP QW laser exhibits low threshold (∼31 mA), high quantum efficiency (72%, ∼1.38 mW/mA), a relatively high characteristic temperature T0 of 69 K, and a shift in wavelength at temperature of 0.19 nm/°C.